A delegation of the Korean National Science & Technology Commission (NSTC) Delegation led by Dr. Cha-Dong Kim visited us on 7 December. 
Correlation between strain and the metal–insulator transition in epitaxial V2O3 thin films grown by Molecular Beam Epitaxy by L. Dillemans et al., 
Deposition and characterization of MgO/Si gate stacks grown by molecular beam epitaxy by Chen-Yi Su et al., Publications
[2011][2010][2009][2008][2007][2006][2005][2004][2003][2002][2001][2000][1999][1998][1997][1996][10 most cited] [Patents] [Awards] [Major Talks] [Theses]
2011
Preparation of homogeneous titania coating on the surface of MWNT.Nemeth, Z., Dieker, C., Kukovecz, A., Alexander, D., Forro, L., Seo, J., Hernadi, K.
Composites Science and Technology, 71 (2), 87-94.
Growth of sputter-deposited gold nanoparticles in ionic liquids.
Vanecht, E., Binnemans, K., Seo, J., Stappers, L., Fransaer, J.
Physical Chemistry Chemical Physics, 13 (30), 13565-13571.
Preparation and characterization of composite membranes based on sulfonated PEEK and AlPO4 for PEMFCs
V. S. Rangasamy, S. Thayumanasundaram and J.-P. Locquet
submitted to Solid State Ionics
Electrochemical investigation on Li2CoSiO4 as cathode and carbon nanotubes as anodes for Lithium Battery
S. Thayumanasundaram, V. S. Rangasamy, E. Couteau, N. De Greef, J.W. Seo and J.-P. Locquet
submitted to Journal of Power Sources
Correlation between strain and the metal-insulator transition in epitaxial V2O3 thin films grown by MBE
L. Dillemans, R. R. Lieten, M. Menghini, T. Smets, J. W. Seo and J.-P. Locquet
submitted to Thin Solid Films
Deposition and characterization of MgO/Si gate stacks grown by MBE
C.-Y. Su, M. Frederickx, M. Menghini, L. Dillemans, R. R. Lieten, T. Smets, J. W. Seo and J.-P. Locquet
submitted to Thin Solid Films
Solid phase epitaxy of Germanium on Silicon substrates
R.R. Lieten , Q.-B. Ma, J. Guzman, J.W. Ager III, E.E. Haller, J.-P. Locquet
Mater. Res. Soc. Symp. Proc. Vol. 1339 © 2011 Materials Research Society pp. 1-6
Indium Rich III-Nitrides on Germanium by Molecular Beam Epitaxy
R.R. Lieten, W.-J. Tseng, M. Leys, J.-P. Locquet, J. Dekoster
Mater. Res. Soc. Symp. Proc. Vol. 1324 © 2011 Materials Research Society pp. 1-6
Unexpected optical response of single ZnO nanowires probed using controllable electrical contacts
Y. J. Zeng, M. Menghini, D. Y. Li, S. S. Lin, Z. Z. Ye, J. Hadermann, T. Moorkens, J.W. Seo, J.P. Locquet and C. Van Haesendonck
Phys. Chem. Chem. Phys., 2011, Advance Article, 13, 6931-6935
Solid phase epitaxial growth of Dy-Germanide films on Ge(100) substrates
Md. Nurul Kabir Bhuiyan, Mariela Menghini, J.W. Seo and J.P. Locquet
Microelectronic Engineering, 88 (8), 423-426.
Epitaxial growth of Dy2O3 films on SrTiO3 (001) substrates by molecular beam epitaxy
Md N K Bhuiyan, M Menghini, J.W. Seo, Ch Dieker, W Jaeger, C Marchiori and J.P. Locquet
Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, 29 (1), art.nr. 01A801, 1-4.
High quality epitaxial Dy3Ge5 films grown on Ge (001) substrates
Md N K. Bhuiyan, M Menghini, J. W. Seo, C Marchiori and J.P. Locquet
Journal of Vacuum Science & Technology B, Microelectronics and Nanometer Structures, 29 (1) art.nr. 01A805, 1-4.
Epitaxial growth of Dy2O3 thin films on epitaxial Dy-germanide films on Ge(001) substrates.
Bhuiyan, K., Menghini, M., J.W. Seo and J.P. Locquet
Microelectronic Engineering, 88 (4), 411-414.
Epitaxial growth of V2O3 on Al2O3 by reactive MBE
Leander Dillemans, Tuan Tran, Md. Nurul Kabir Bhuiyan, Tomas Smets, Mariela Menghini, Ruben Lieten, J.W. Seo and J. P. Locquet
Mater. Res. Soc. Symp. Proc. Vol. 1292 © 2011 Materials Research Society pp. 1-6
2010
Reinforcing multiwall carbon nanotubes by electron beam irradiation.Duchamp, M., Meunier, R., Smajda, R., Mionic, M., Magrez, A., Seo, J., Forro, L., Song, B., Tomanek, D.
Journal of Applied Physics, 108 (8)
Comment on "MEL-type pure-silica zeolite nanocrystals prepared by an evaporation-assisted two-stage synthesis method as ultra-low-k materials".
Eslava, S., Seo, J., Kirschhock, C., Baklanov, M., Maex, K., Martens, J.
Advanced Functional Materials, 20 (15), 2377-2379.
Low-temperature, highly efficient growth of carbon nanotubes on functional materials by an oxidative dehydrogenation reaction.
Magrez, A., Seo, J., Smajda, R., Korbely, B., Andresen, J., Mionic, M., Casimirius, S., Forró, L.
ACS Nano, 4 (7), 3702-3708.
Phase separation as a tool to control dispersion of multiwall carbon nanotubes in polymeric blends.
Suryasarathi, B., Özdilek, C., Leys, J., Seo, J., Wübbenhorst, M., Vermant, J., Moldenaers, P.
Acs applied materials & interfaces, 2 (3), 800-807.
Controlled positioning of carbon nanotubes by dielectrophoresis: Insights into the solvent and substrate role.
Duchamp, M., Lee, K., Dwir, B., Seo, J., Kapon, E., Forró, L., Magrez, A.
ACS Nano, 4 (1), 279-284.
Reversible NOx storage over Ru/Na-Y zeolite.
Smeekens, S., Heylen, S., Villani, K., Houthoofd, K., Godard, E., Tromp, M., Seo, J., DeMarco, M., Kirschhock, C., Martens, J.
Chemical Science, 1 (6), 763-771.
Study of electron transport in a compact storage ring after interaction with target materials
B.C. Masschaele, T. Roggen, H. De Gersem and J.P. Locquet
Nuclear Instruments & Methods in Physics Research B, 268(24), 3533-3538.
Epitaxial Dy2O3 thin films grown on Ge(100) substrates by molecular beam epitaxy
Md. N. K. Bhuiyan, M. Menghini, C. Dieker, J.W. Seo, J.P. Locquet, R. Vitchev and C. Marchiori
Mat. Res. Soc. Symp. Proc. Volume 1252, I03-01(2010)
Structural and electrical properties of fully strained (In,Ga)As FETs with in-situ deposited gate stacks
C. Marchiori, E. Kiewra, J. Fompeyrine, C. Gerl, C. Rossel, M. Richter, J.P. Locquet, T. Smets, M. Sousa, C. Andersson and DJ Webb
Appl. Phys. Lett. 96, 212901 (2010)
Beam energy considerations for gold nano-particle enhanced radiation treatment
F. Van den Heuvel, J.P. Locquet and S. Nuyts
Phys. Med. Biol. 55, 4509 (2010)
2009
Mechanical and electronic properties of vanadium oxide nanotubes.Sipos, B., Duchamp, M., Magrez, A., Forro, L., Barisic, N., Kis, A., Seo, J., Bieri, F., Krumeich, F., Nesper, R., Patzke, G.
Journal of Applied Physics, 105 (7), art.nr. 074317 (5 pp).
Convenient synthesis of ordered mesoporous silica at room temperature and quasi-neutral pH.
Jammaer, J., Aerts, A., D'Haen, J., Seo, J., Martens, J.
Journal of materials chemistry, 19 (44), 8290-8293.
LabSync: A project to develop a European facility based on a table-top synchrotron light source
G. Di Domenico, A. Franconieri, M. Gambaccini, M. Marziani, A Taibi, A. Tartari and J.P. Locquet
Proceedings Channeling 2008, Charged and Neutral Particles Channeling Phenomena October 25 - November 1 2008, Erice, Italy
Table-top synchrotron systems
J.P. Locquet and J. Vanacken
McGraw-Hill Yearbook of Science and Technology 2009, pp 382-384 (2009).
2008
Nominal and effective dosimetry of silica nanoparticles in cytotoxicity assays.Lison, D., Thomassen, L., Rabolli, V., Gonzalez, L., Napierska, D., Seo, J., Kirsch-Volders, M., Hoet, P., Kirschhock, C., Martens, J.
Toxicological Sciences, 104 (1), 155-162.
Electrical properties of La2O3 and HfO2/La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices.
Mavrou, G., Galata, S., Tsipas, P., Sotiropoulos, A., Panayiotatos, Y., Dirnoulas, A., Evangelou, E., Seo, J., Dieker, C.
Journal of Applied Physics, 103, art.nr. 014506, 1-9.
Epitaxial (001) Ge on Crystalline Oxide Grown on (001) Si
C. Dieker, J.W. Seo, A. Guiller, M. Sousa, J.P. Locquet, J. Fompeyrine, Y. Panayiotatos, A. Sotiropoulos, K. Argyropoulos & A. Dimoulas,
Springer Proceedings in Physics 120, pp 119-122 (2008).
Antiferromagnetic LaFeO3 thin films and their effect on exchange bias
J.W. Seo, E. E. Fullerton, F. Nolting, A. Scholl, J. Fompeyrine and J.P. Locquet
Journal of Physics: Condensed Matter, 20, 264014 (2008)
2007
Uniformly dispersed deposition of colloidal nanoparticles and nanowires by boiling.Lee, K., Duchamp, M., Kulik, G., Magrez, A., Seo, J., Jeney, S., Kulik, A., Forro, L., Sundaram, R., Brugger, J.
Applied Physics Letters, 91 (17), art.nr. 173112, 173112-1-173112-3.
Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric.
Mavrou, G., Galata, S., Sotiropoulos, A., Tsipas, P., Panayiotatos, Y., Dimoulas, A., Evangelou, E., Seo, J., Dieker, C.
Microelectronic Engineering, 84 (9-10), 2324-2327.
Diameter-dependent elastic modulus supports the metastable-catalyst growth of carbon nanotubes.
Lee, K., Lukic, B., Magrez, A., Seo, J., Briggs, G., Kulik, A., Forro, L.
Nano Letters, 7 (6), 1598-1602.
Interface engineering for Ge metal-oxide-semiconductor devices.
Dimoulas, A., Brunco, D., Ferrari, S., Seo, J., Panayiotatos, Y., Sotiropoulos, A., Conard, T., Caymax, M., Spiga, S., Fanciulli, M., Dieker, C., Evangelou, E., Galata, S., Houssa, M., Heyns, M.
Thin Solid Films, 515 (16), 6337-6343.
Catalytically grown carbon nanotubes: from synthesis to toxicity.
Seo, J., Magrez, A., Milas, M., Lee, K., Lukovac, V., Forró, L. Journal of physics d-applied physics, 40 (6), R109-R120.
SrHfO3 as gate dielectric for future CMOS technology
C. Rossel, M. Sousa, C. Marchiori, J. Fompeyrine, D. Webb, D. Caimi, B. Mereu, A. Ispas, J.P. Locquet, H. Siegwart, R. Germann, A. Tapponnier and K. Babich,
Microelectronic Engineering 84, pp. 1869-1873 (2007).
Epitaxial germanium-on-insulator grown on (001)Si
J.W. Seo, C. Dieker, A. Tapponnier, C. Marchiori, M. Sousa, J.P. Locquet, J. Fompeyrine, A. Ispas, C. Rossel, Y. Panayiotatos, A. Sotiropoulos and A. Dimoulas,
Microelectronic Engineering 84, pp. 2328-2331 (2007).
Enhancement-mode buried-channel In0.7Ga0.3As/In0.52Al0.48As MOSFETs with high-kappa gate dielectrics
Y.N. Sun, E. Kiewra, S. Koester, N. Ruiz, A. Callegari, K. Fogel, D. Sadana, J. Fompeyrine, D. Webb, J.P. Locquet, M. Sousa, R. Germann, K. Shiu and S. Forrest,
IEEE Electron Device Letters 28, pp. 473-475 (2007).
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
D. Webb, J. Fompeyrine, S. Nakagawa, A. Dimoulas, C. Rossel, M. Sousa, R. Germann, S. Alvarado, J.P. Locquet, C. Marchiori, H. Siegwart, A. Callegari, E. Kiewra, Y. Sun, J. De Souza and N. Hoffmann,
Microelectronic Engineering 84, pp. 2142-2145 (2007).
Optical properties of epitaxial SrHfO3 thin films grown on Si
M. Sousa, C. Rossel, C. Marchiori, H. Siegwart, D. Caimi, J.P. Locquet, D. Webb, R. Germann, J. Fompeyrine, K. Babich, J.W. Seo and C. Dieker,
Journal of Applied Physics 102, 104103 (2007).
2006
Structural domains in antiferromagnetic LaFeO3 thin filmsJ. W. Seo, C. Dieker, J. Fompeyrine, H. Siegwart and J.P. Locquet,
International Journal of Materials 97, no.7, pp. 943-947 (2006).
GaAs MOS capacitors and self-aligned MOSFETs with HfO2 gate dielectrics
S.J. Koester, E.W. Kiewra, Y. Sun, D.A. Neumayer, J.A. Ott, D.K. Sadana, D.J. Webb, J. Fompeyrine, J.P. Locquet, M. Sousa and R. Germann,
Device Research Conference (IEEE Cat. No. 06TH8896) pp. 43-4 (2006).
Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and alpha-Si/SiO2 interlayers
S. Koester, E. Kiewra, Y.N. Sun, D. Neumayer, J.A. Ott, M. Copel, D. Sadana, D. Webb, J. Fompeyrine, J.P. Locquet, C. Marchiori, M. Sousa and R. Germann,
Applied Physics Letters 89, 042104 (2006).
High-K dielectrics for the gate stack
J.P. Locquet, C. Marchiori, M. Sousa, J. Fompeyrine and J.W. Seo,
Journal of Applied Physics 100, 051610 (2006).
Thermal stability of the SrTiO3/(Ba,Sr)O stacks epitaxially grown on Si
C. Marchiori, M. Sousa, A. Guiller, H. Siegwart, J.P. Locquet, J. Fompeyrine, G. Norga and J.W. Seo,
Applied Physics Letters 88, 072913 (2006).
Band-edge high-performance high-k/metal gate n-MOSFETs using cap layers containing Group IIA and IIIB elements with gate-first processing for 45 nm and beyond
V. Narayanan, V.K. Paruchuri, N.A. Bojarczuk, B.P. Linder, B. Doris, Y.H. Kim, S. Zafar, J. Stathis, S. Brown, J. Arnold, M. Copel, M. Steen, E. Cartier, A. Callegari, P. Jamison, J.P. Locquet, D.L. Lacey, Y. Wang, P.E. Batson, P. Ronsheim, R. Jammy, M.P. Chudzik, M. Ieong, S. Guha, G. Shahidi and T.C. Chen,
2006 Symposium on VLSI Technology (IEEE Cat. No. 06CH37743C) pp. 2 (2006).
Solid phase epitaxy of SrTiO3 on (Ba,Sr)O/Si(100): The relationship between oxygen stoichiometry and interface stability
G. Norga, C. Marchiori, C. Rossel, A. Guiller, J.P. Locquet, H. Siegwart, D. Caimi, J. Fompeyrine, J.W. Seo and C. Dieker,
Journal of Applied Physics 99, 084102 (2006).
Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy
Z. Rittersma, J. Hooker, G. Vellianitis, J.P. Locquet, C. Marchiori, M. Sousa, J. Fompeyrine, L. Pantisano, W. Deweerd, T. Schram, M. Rosmeulen, S. De Gendt and A. Dimoulas,
Journal of Applied Physics 99, 024508 (2006).
Field-effect transistors with SrHfO3 as gate oxide
C. Rossel, B. Mereu, C. Marchiori, D. Caimi, M. Sousa, A. Guiller, H. Siegwart, R. Germann, J.P. Locquet, J. Fompeyrine, D. Webb, C. Dieker and J.W. Seo,
Applied Physics Letters 89, 053506 (2006).
Electrostatic modulation of the superfluid density in an ultrathin La2-xSrxCuO4 film
A. Ruefenacht, J.P. Locquet, J. Fompeyrine, D. Caimi and P. Martinoli,
Physical Review Letters 96, (2006).
Buried-channel In0.70Ga0.30As/In0.52Al0.48As MOS capacitors and transistors with HfO2 gate dielectrics
S. Yanning, S.J. Koester, E.W. Kiewra, K.E. Fogel, D.K. Sadana, D.J. Webb, J. Fompeyrine, J.P. Locquet, M. Sousa and R. Germann,
Device Research Conference (IEEE Cat. No. 06TH8896) pp. 49-50 (2006).
2005
Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrityG. Norga, C. Marchiori, A. Guiller, J.P. Locquet, C. Rossel, H. Siegwart, D. Caimi, J. Fompeyrine and T. Conard,
Applied Physics Letters 87, 262905 (2005).
HfO2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability
J.W. Seo, C. Dieker, J.P. Locquet, G. Mavrou and A. Dimoulas,
Applied Physics Letters 87, 221906 (2005).
2004
Growth of perovskites with crystalline interfaces on Si(100)G.J. Norga, A. Guiller, C. Marchiori, J.P. Locquet, H. Siegwart, D. Halley, C. Rossel, D. Caimi, J.W. Seo and J. Fompeyrine,
Fundamentals of Novel Oxide/Semiconductor Interfaces Symposium (Mater. Res. Soc. Symposium Proceedings Vol.786) pp. 219-26 (2004).
Orientation selection in functional oxide thin films
G. Norga, L. Fe, F. Vasiliu, J. Fompeyrine, J.P. Locquet and O. Van Der Biest,
Journal of the European Ceramic Society 24, pp. 969-974 (2004).
Domain-size-dependent exchange bias in Co/LaFeO3
A. Scholl, F. Nolting, J.W. Seo, H. Ohldag, J. Stohr, S. Raoux, J.P. Locquet and J. Fompeyrine,
Applied Physics Letters 85, pp. 4085-4087 (2004).
Antiferromagnetic transition in epitaxial strained La2CuO4 thin films
A. Suter, J.P. Locquet, E. Morenzoni, T. Prokscha, D. Eshchenko, N. Garifianov, R. Khasanov, H. Luetkens and J.W. Seo,
Journal of Magnetism and Magnetic Materials 272, pp. 110-111 (2004).
2003
Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-k layerD. Halley, G. Norga, A. Guiller, J. Fompeyrine, J.P. Locquet, U. Drechsler, H. Siegwart and C. Rossel,
Journal of Applied Physics 94, pp. 6607-6610 (2003).
Determination of the antiferromagnetic spin axis in epitaxial LaFeO3 films by x-ray magnetic linear dichroism spectroscopy
J. Luning, F. Nolting, A. Scholl, H. Ohldag, J.W. Seo, J. Fompeyrine, J.P. Locquet and J. Stohr,
PHYSICAL REVIEW B 67, pp. 214433 (2003).
Growth of single unit-cell superconducting La2-xSrxCuO4 films
A. Rufenacht, P. Chappatte, S. Gariglio, C. Leemann, J. Fompeyrine, J.P. Locquet and P. Martinoli,
Solid-State Electronics 47, pp. 2167-2170 (2003).
Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111)Si
J.W. Seo, J. Fompeyrine, A. Guiller, G. Norga, C. Marchiori, H. Siegwart and J.P. Locquet,
Applied Physics Letters 83, pp. 5211-5213 (2003).
2002
Induced magnetic moments at a ferromagnet-antiferromagnet interfaceA. Hoffmann, J.W. Seo, M. Fitzsimmons, H. Siegwart, J. Fompeyrine, J.P. Locquet, J. Dura and C. Majkrzak,
Physical Review B 66, 220406 (2002).
2001
Transport properties in doped Mott insulator epitaxial La1-yTiO3+d thin filmsS. Gariglio, J.W. Seo, J. Fompeyrine, J.P. Locquet and J.-M. Triscone,
Physical Review B 63, pp. 161103 (2001).
Domain structure in LaFeO3 thin films and its role on exchange coupling
J. W. Seo, Fompeyrine, H. Siegwart and J.P. Locquet,
Transport and Microstructural Phenomena in Oxide Electronics. Symposium (Materials Research Society Symposium Proceedings Vol.666) pp. F8.8.1-6 (2001).
Dynamic critical properties of the vortex-glass transition derived from angular-dependent properties of La2-xSrxCuO 4 films
T. Schneider, G.I. Meijer, J. Perret, J.P. Locquet and P. Martinoli,
Physical Review B63, 144527 (2001).
Studies of the magnetic structure at the ferromagnet-antiferromagnet interface
A. Scholl, F. Nolting, J. Stohr, J. Luning, J.W. Seo, J.P. Locquet, J. Fompeyrine, S. Anders, H. Ohldag and H. Padmore,
Journal of Synchrotron Radiation 8, pp. 101-104 (2001).
Exploring the microscopic origin of exchange bias with photoelectron emission microscopy (invited)
A. Scholl, F. Nolting, J. Stohr, T. Regan, J. Luning, J.W. Seo, J.P. Locquet, J. Fompeyrine, S. Anders, H. Ohldag and H. Padmore,
Journal of Applied Physics 89, pp. 7266-7268 (2001).
Oxidation mechanism of LaTiO3.5 thin films
J.W. Seo, J. Fompeyrine, H. Siegwart and J.P. Locquet,
Physical Review B 63, 205401 (2001).
Dynamic critical properties of the vortex-glass transition derived front angular-dependent properties of La2-xSrxCuO4 films
T. Schneider, G. Meijer, J. Perret, J.P. Locquet and P. Martinoli,
Physical Review B 63, 144527 (2001).
2000
Nanoscale magnetostrictive response in a thin film owing to a local magnetic fieldR. Berger, F. Krause, A. Dietzel, J.W. Seo, J. Fompeyrine and J.P. Locquet,
Applied Physics Letters 76, pp. 616-618 (2000).
Investigations of the surface morphology of La2-xSrxCuO4 MBE-grown thin films before and after electrochemical oxidation
A. Daridon, J. Fompeyrine, J.P. Locquet, C. Musil and H. Siegenthaler,
Surface Science 465, pp. 149-162 (2000).
Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins
F. Nolting, A. Scholl, J. Stohr, J.W. Seo, J. Fompeyrine, H. Siegwart, J.P. Locquet, S. Anders, J. Luning, E. Fullerton, M. Toney, M. Scheinfein and H. Padmore,
Nature 405, pp. 767-769 (2000).
Observation of antiferromagnetic domains in epitaxial thin films
A. Scholl, J. Stohr, J. Luning, J.W. Seo, J. Fompeyrine, H. Siegwart, J.P. Locquet, F. Nolting, S. Anders, E. Fullerton, M. Scheinfein and H. Padmore,
Science 287, pp. 1014-1016 (2000).
Normal state resistivity of underdoped YBa2Cu3O7-d films and La2-xSrxCuO4 ultra-thin films in fields up to 60 T
L. Trappeniers, J. Vanacken, P. Wagner, S. Curras, G. Teniers, J. Perret, J.P. Locquet, V. Moshchalkov and Y. Bruynseraede,
Physica C 341, pp. 903-904 (2000).
Comparison of the transport mechanism in underdoped high-temperature superconductors and in spin ladders
J. Vanacken, L. Trappeniers, G. Teniers, P. Wagner, K. Rosseel, J. Perret, J.P. Locquet, V. Moshchalkov and Y. Bruynseraede,
Physica C 337, pp. 260-264 (2000).
1999
Growth and characterization of ferroelectric LaTiO3.5 thin filmsJ. Fompeyrine, J.W. Seo and J.P. Locquet,
Journal of the European Ceramic Society 19, pp. 1493-1496 (1999).
Normal state resistivity of underdoped YBa2Cu3Ox thin films and La2-xSrxCuO4 ultra-thin films under epitaxial strain
L. Trappeniers, J. Vanacken, P. Wagner, G. Teniers, S. Curras, J. Perret, P. Martinoli, J.P. Locquet, V. Moshchalkov and Y. Bruynseraede,
Journal of Low Temperature Physics 117, pp. 681-685 (1999).
1998
Local determination of the terminating layer of SrTiO3J. Fompeyrine, R. Berger, C. Gerber, J. Perret, J.W. Seo and J.P. Locquet,
Superconducting and related oxides: Physics and nanoengineering III 3481, pp. 274-279 (1998).
Local determination of the stacking sequence of layered materials
J. Fompeyrine, R. Berger, H. Lang, J. Perret, E. Machler, C. Gerber and J.P. Locquet,
Applied Physics Letters 72, pp. 1697-1699 (1998).
Dynamical conductivity of an MBE-grown La1.84Sr0.16CuO4 thin film at frequencies from 5 to 36 cm(-1)
B. Gorshunov, A. Pronin, A. Volkov, H. Somal, D. Van Der Marel, B. Feenstra, Y. Jaccard and J.P. Locquet,
Physica B 244, pp. 15-21 (1998).
Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain
J.P. Locquet, J. Perret, J. Fompeyrine, E. Machler, J.W. Seo and G. Van Tendeloo,
Nature 394, pp. 453-456 (1998).
Anomalous millimeter-wave absorption in the superconducting phase of La2-xSrxCuO4
A. Pronin, B. Gorshunov, A. Volkov, H. Somal, D. Van Der Marel, B. Feenstra, Y. Jaccard and J.P. Locquet,
JETP LETTERS 68, pp. 432-436 (1998).
Microstructural investigation of a La1.9Sr0.1CuO4 thin film grown by MBE under a large compressive strain
J.W. Seo, J. Perret, J. Fompeyrine, J.P. Locquet and C. Van Tendeloo,
Electron Microscopy 1998, 2 pp. 287-288 (1998).
On the microstructure of LaTiO3+x thin films grown by MBE
J.W. Seo, J. Fompeyrine and J.P. Locquet,
Electron Microscopy 1998, 2 pp. 351-352 (1998).
1997
Growth and electrochemical oxidation of MBE-grown c-axis La2CuO4 thin films on different substratesA. Daridon, H. Siegenthaler, F. Arrouy, E. Williams, E. Machler and J.P. Locquet,
Journal of Alloys and Compounds 251, pp. 118-122 (1997).
Benzoylpivaloylmethanide precursors for the chemical beam epitaxy of oxide thin films.1. Synthesis, characterization, and use of yttrium benzoylpivaloylmethanide
E. Fritsch, E. Machler, F. Arrouy, O. Orama, H. Berke, I. Povey, P. Willmott and J.P. Locquet,
Chemistry of Materials 9, pp. 127-134 (1997).
Epitaxially induced defects in Sr- and O-doped La2CuO4 thin films is grown by MBE: Implications for transport properties
J.P. Locquet and E. Williams,
Acta Physica Polonica A 92, pp. 69-84 (1997).
Using phthalocyanine precursors to prepare oxide thin films: Decoupling the growth rate from the evaporation rate
E. Machler, F. Arrouy, E. Fritsch, J. Bednorz, H. Berke, J. Huber and J.P. Locquet,
Applied Physics Letters 71, pp. 710-712 (1997).
Molecular beam epitaxy and microstructural study of La2-xSr1+xCu2O6+y thin films
K. Verbist, O. Milat, G. Vantendeloo, F. Arrouy, E. Williams, C. Rossel, E. Machler and J.P. Locquet,
Physical Review B 56, pp. 853-861 (1997).
Transmission electron microscopy investigations of defects in molecular beam epitaxy-grown oxide films
E. Williams, A. Daridon, F. Arrouy, J. Perret, Y. Jaccard, J.P. Locquet, E. Machler, H. Siegenthaler, P. Martinoli and O. Fischer,
Journal of Alloys and Compounds 251, pp. 11-14 (1997).
1996
Growth, microstructure, and electrochemical oxidation of MBE-grown c-axis La2CuO4 thin filmsF. Arrouy, J.P. Locquet, E. Williams, E. Machler, R. Berger, C. Gerber, C. Monroux, J. Grenier and A. Wattiaux,
Physical Review B 54, pp. 7512-7520 (1996).
Schiff base precursor compounds for the chemical beam epitaxy of oxide thin films.1. Deposition of CuO on MgO[001] using copper(II) bis(benzoylacetone)-ethylendiimine
E. Fritsch, E. Machler, F. Arrouy, H. Berke, I. Povey, P. Willmott and J.P. Locquet,
Journal of Vacuum Science & Technology A14, pp. 3208-3213 (1996).
Ion scattering for in situ characterization of composition of La2-xSrxCuO4 films
P. Hucknall, S. Sugden, C. Sofield, A. Harker, E. Machler and J.P. Locquet,
Applied Physics Letters 69, pp. 3081-3083 (1996).
Evidence of 3D-XY critical behaviour in La2-xSrxCuO4 films
Y. Jaccard, T. Schneider, J.P. Locquet, E. Williams, P. Martinoli and O. Fischer,
Europhysics Letters 34, pp. 281-286 (1996).
3D-XY critical behavior in La2-xSrxCuO4 thin films probed by penetration depth measurement
Y. Jaccard, T. Schneider, J.P. Locquet, E. Williams, O. Fischer and P. Martinoli,
Czechoslovak Journal of Physics 46, pp. 1079-1080 (1996).
Local electrochemical oxidation/reduction: First step towards a new lithography?
J.P. Locquet,
Physica C 263, pp. 160-163 (1996).
The nature of the overdoped state in high T-c superconductors.
J.P. Locquet and M. Pedersen,
Czechoslovak Journal of Physics 46, pp. 1085-1086 (1996).
Local electrochemical oxidation/reduction: First step towards a new lithography?
J.P. Locquet, F. Arrouy, E. Machler, M. Despont, P. Bauer and E. Williams,
Applied Physics Letters 68, pp. 1999-2001 (1996).
Variation of the in-plane penetration depth lambda(ab) as a function of doping in La2-xSrxCuO4+/-d thin films on SrTiO3: Implications for the overdoped state
J.P. Locquet, Y. Jaccard, A. Cretton, E. Williams, F. Arrouy, E. Machler, T. Schneider, O. Fischer and P. Martinoli,
Phys. Rev. B 54, pp. 7481-7488 (1996).
10 most cited
Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strainJ.P. Locquet, J. Perret, J. Fompeyrine, E. Mächler, J. W. Seo and G. Van Tendeloo,
Nature, 394, 453-455 (1998).
[impact factor 2006 = 29.273]
Times cited: 243
Structural phase transition in YBa2Cu3O7 the role of dimensionality for high temperature superconductivity
I. K. Schuller, D. G. Hinks, M. A. Beno, D. W. Capone, L. Soderholm, J.P. Locquet, Y. Bruynseraede, C. U. Segre and K. Zhang,
Solid State Communications, 63, 385 – 388 (1987)
[impact factor 2006 = 1.556]
Times cited: 193
Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins
F. Nolting, A. Scholl, J. Stohr, J. W. Seo, J. Fompeyrine, H. Siegwart, J.P. Locquet, S. Anders, J. Luning, E. E. Fullerton, M. F. Toney, M. R. Scheinfein and H. A. Padmore,
Nature, 405, 767 – 769 (2000)
[impact factor 2006 = 29.273]
Times cited: 148
Observation of antiferromagnetic domains in epitaxial LaFeO3 by means of x-ray magnetic linear dichroism spectromicroscopy
A. Scholl, J. Stöhr, J. Lüning, J. W. Seo, J. Fompeyrine, H. Siegwart, J.P. Locquet, F. Nolting, S. Anders, E. E. Fullerton, M. R. Scheinfein and H. A. Padmore,
Science, 287, 1014-1016 (2000).
[impact factor 2006 = 30.927]
Times cited: 101
Block-by-block deposition : A new growth mthod for complex oxide thin films
J.P. Locquet, A. Catana, E. Mächler, C. Gerber and J. G. Bednorz,
Appl. Phys. Lett. 64, 372-374 (1994).
[impact factor 2006 = 3.977]
Times cited: 65
Oxygen evolution form Yba2Cu3O6.85 high Tc superconductors
H. Strauven, J.P. Locquet, O. B. Verbeke
Solid State Communications 65 293-296 (1988)
[impact factor 2006 = 1.556]
Times cited: 39
Growth, microstructure and electrochemical oxidation of MBE-grown c-axis La2CuO4 thin films
F. Arrouy, J.P. Locquet, E. J. Williams, R. Berger, C. Gerber, C. Monroux, J. C. Grenier and A. Wattiaux
Phys. Rev. B54, 7512-7520 (1996)
[impact factor 2006 = 3.107]
Times cited:37
Discrete and continuous disorder in superlattices
J.P. Locquet, D. Neerinck, L. Stockman, Y. Bruynseraede and I. K. Schuller,
Phys. Rev. B39, 13338-13342 (1989)
[impact factor 2006 = 3.107]
Times cited:34
Origin of Cu-rich precipitate formation on superconducting films – a competition between nucleation, oxidation and growth kinetics
J.P. Locquet, Y. Jaccard, C. Gerber and E. Maechler,
Appl. Phys. Lett. 63 1426-1428 (1993)
[impact factor 2006 = 3.9787]
Times cited:32
Characterisation of a radio-frequency plasma source for the molecular beam epitaxial growth of high-Tc superconductor films
J.P. Locquet and E. Maechler
Journal of Vacuum Science & Technology, A10, 3100-3103 (1992)
[impact factor 2006 =1.394]
Times cited: 32
Patents
Process for manufacturing thin films by multi-layer depositionJ. G. Bednorz, A. Catana, J.-P. Locquet, E. Mächler and K. A. Müller
Patent Filed : 13 September 1993
Patent Issued : 15 July 1997 as US 5648321
Deposition method and use of precursor therefor
H. Berke, J. R. Huber, F. Arrouy, J. G. Bednorz, E. Fritsch, J.-P. Locquet and E. Mächler
Patent Filed : 29 March 1996
Patent Issued : 7 July 2000 as EP 0889975
Method of imaging a magnetic field emanating from a surface using a conventional scanning force microscope
Rüdiger Berger, A. H. Dietzel, J. Fompeyrine, F. Krause, J.-P. Locquet and E. Mächler
Patent Filed : 20 March 2000
Patent Issued : 10 September 2002 as US 6448766
Magnetic device with ferromagnetic layer contacting specified yttrium or rare earth element oxide antiferromagnetic layer
R. Allenspach, J. Fompeyrine, E. Fullerton, J.-P. Locquet, T. Moran and J. W. Seo
Patent Filed : 8 March 2000
Patent Issued : 7 October 2003 as US 6631057
Tailored insulator properties for devices
R. B. Laibowitz, J. D. Baniecki, J. G. Bednorz and J.-P. Locquet
Patent Filed : 20 April 2001
Patent Issued : 15 July 2003 as US 6593181
Method and apparatus for doping a solid
C. Gerber and J.-P. Locquet
Patent Filed : 8 March 1993
Application Published : 15 September 1994 as WO 93/20991
Material evaporation chamber with differential vacuum pumping
C. Chaix, A. Jarry, P.-A. Nutte, J.-P. Locquet, J. Fompeyrine and H. Siegwart
Patent Filed : 18 June 2003
Application Published : 24 December 2003 as WO 03/106731
Awards
IBM Patent Application Award (7 times)IBM Patent Issue Award (7 times)
IBM Supplemental Patent Awards (2 times)
IBM Invention Achievement Award (First Plateau)
IBM Invention Achievement Award (Second Plateau)
Improved MBE process and Tc doubling in superconducting oxides
IBM Outstanding Innovation Award
Major Talks
American Physical Society March Meeting
Advanced gate stack materials and processing,23 March 2005, Los Angeles (USA)
Electrical and magnetic functionality in complex oxide films,
19 March 2002, Indianapolis (USA)
Changes of Tc under epitaxial strain: implications for the mechanism of superconductivity,
23 March 1999, Atlanta (USA).
Doubling the critical temperature of La1.9Sr0.1CuO4 thin films using epitaxial strain,
18 March 1998, Los Angeles (USA).
New growth mechanism for high Tc oxides : A different approach for the preparation of perfect and smooth thin films by MBE,
25 March 1993, Seattle (USA).
Materials Research Society Meeting
Functional oxides grown by molecular beam epitaxy19 April 2006, San Francisco (USA)
Molecular beam epitaxy for advanced gate stack materials and processes,
29 March 2005, San Francisco (USA).
Magnetism in LaFeO3 based exchange biased systems,
24 April 2003, San Francisco (USA).
Nucleation of Dielectric and Magnetic functionality in complex oxide films,
Materials Research Society Workshop on Dielectric Materials/Semiconductors,
11 September 2001, Chattanooga (USA).
Multicomponent oxide thin film fabrication techniques,
Tutorial, 5April 1999, San Francisco (USA).
Epitaxy induced defects in Sr and O doped La2CuO4 thin films grown by MBE: Implications for transport properties,
2 December 1996, Boston (USA).
European Materials Research Society
Molecular beam epitaxy for the advanced CMOS gate stackJune 1 2006, Nice (France).
Novel materials, growth processes and characterization methods for advanced gate stacks,
June 12 2003, Strasbourg (France).
The Invest project : Molecular Beam Epitaxy for advanced oxide epitaxy,
June 20 2002, Strasbourg (France).
Epitaxy induced defects in Sr and O doped La2CuO4 thin films grown by MBE: Implications for transport properties,
4 June 1996, Strasbourg (France).
Theses
Critical issues in the molecular beam epitaxy deposition of high-k dielectrics on Si: An x-ray photoelectron spectroscopy approachDr. Chiara Marchiori
Prof. L. Miglio, Prof. J.P. Locquet (2005)
Etude de la profondeur de penetration magnéetique de couches supraconductrices ultraminces de La2-xSrxCuO4
Dr. Alain Rüfenacht
Prof. P. Martinoli, Prof. J.P. Locquet (2005)
Transport properties of LaTiO3+d and REBa2Cu3O7-d thin films: a study of correlation effects
Dr. Stefano Gariglio
Prof. J.-M. Triscone, Prof. J.P. Locquet (2003)
Epitaxial strain effects and superconductor-insulator transition in ultrathin La2-xSrxCuO4 films
Dr. Joël Perret
Prof. P. Martinoli, Prof. J.P. Locquet (2000)
Molecular beam epitaxy growth and electrochemical investigations of La2CuO4 thin films
Dr. Antoine Daridon
Prof. H. Siegenthaler, Prof. J.P. Locquet (1998)
Croissance épitaxiale par jets moleculaires de couches minces de La2-xSrxCuO4 et etude de leurs propriétés structurales et supraconductrices en fonction du dopage x
Dr. Yvan Jaccard
Prof. P. Martinoli, Prof. J.P. Locquet (1996)
