Research
Electric field induced metal - insulator - transition (MIT)
For non-volatile memory (NVM) applications, the goal is to change from
flash technology towards more compact and scalable designs using
alternative mechanisms. Phase change (PCM) and resistive switching
memories (RRAM) are two popular approaches, but in this project we
excludes mechanisms relying on transport and rearrangement of atoms
and concentrate on purely electronic phase transition between an
insulating and a metallic state.
There are many materials that show a MIT for instance as a function of
doping. The adjacent Figure shows the resistivity changes versus
temperature for the Pr(Ca,Sr)MnO3 compound. In this project, the goal
is to find systems that display an MIT at high temperatures (>400K).
In addition the MIT must be switchable by an electric field. The
resistance ratio between the metallic and the insulating state should
exceed 1000.
This research project is funded in part by the FWO project on Metal insulator transitions in correlated electron systems.

